We have used a bias-induced annealing process to improve the initial performance and the reliability of red (680 nm) Ga.46In.54P vertical-cavity surface-emitting lasers. Measurements showed improved cathodoluminescence efficiency and increased current collection efficiency after the anneal. Trap concentration is believed to be reduced by the bias-induced annealing process.
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Herrick et al. (1998) studied this question.
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