Ultrathin ruthenium films are promising capping layers protecting extreme ultraviolet lithography optics against carbon growth and oxidation. The structure and reactivity of 2, 5, and 7 nm thick nanocrystalline Ru films on Si (serving as a model system for Ru capping layers) were studied by multiple techniques including scanning electron microscopy, X-ray diffraction, X-ray reflectivity, and X-ray photoelectron spectroscopy. The structural analysis indicated dense and flat Ru films, consisting of preferentially (0001)-oriented grains. High resolution core-level Ru 3d 5/2 and O 1s spectroscopy studies have revealed that these Ru films exposed to O 2 ambient are resistant to oxidation up to ∼470 K similar to the oxidation of single-crystalline Ru(0001) surfaces. The reduction of the oxide in the H 2 ambient is highly effective and proceeds already below 370 K.
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He et al. (2007) studied this question.
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