Highly transparent conductive In 2 O 3 films can be easily deposited by simple thermal evaporation from an In 2 O 3 / In source in a low pressure O 2 environment. The important role of In in the evaporation process has been examined. From an analysis of the evaporation chemistry and the thermodynamics of the system, it has been concluded that the incorporation of In in the evaporation source not only significantly enhances the evaporation rate, but also gives rise to a higher concentration of conduction electrons. Many possible reactions in the source region and on the substrate have been considered, and only a few have been found to be of significance, which greatly simplifies the theory. Good qualitative agreement has been found between the theory and several key experimental observations. The theory has also been verified by quantitative comparisons with the experimentally measured film growth rate and the conduction electron concentration.
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Chengjun Pan (1981) studied this question.