We present a numerical characterization of a high‐speed high‐responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metal–semiconductor–metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high‐speed optoelectronic applications.
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Nacer Debbar (2015) studied this question.
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