High-Rate Dry Etching of ZnO in BCl3/CH4/H2Plasmas

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl 3 /CH 4 /H 2 plasma chemistry. Etch rates were measured as a function of BCl 3 flow rate in BCl 3 /CH 4 /H 2 mixture and dc-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl 3 and at dc-bias voltage of -350 V.