Principle of Circuit Conduction and Tunneling Devices Based on Energypacket Coupling Mechanism

Traditional electrical theories attribute current effects in circuits, barrier crossing phenomena in tunneling devices, and charge state variations in semiconductor memories to the directional migration and barrier tunneling of physical electrons. By comparatively analyzing conductor conduction characteristics, electron mass velocity constraints, light speed propagation properties, magnetic storage mechanisms, optical fiber transmission principles and experimental phenomena of multiple tunneling devices, this paper proposes a novel physical mechanism: in all circuits, semiconductor devices and tunneling structures, the carrier for longdistance energy and information transmission is the energypacket. Electrons act as station stepping stones and only undergo local minor perturbations, without longrange migration or barrier penetration. Tunneling current and storage potential variations are apparent effects generated by cross medium coupling of energypackets, rather than penetration motion of physical electrons. This model can uniformly explain core physical phenomena of wire conduction, magnetic storage, floating gate flash memory, tunnel diodes and scanning tunneling microscopy, and resolves contradictions concerning propagation speed, particle source and charge accumulation existing in traditional electron tunneling theories. Based on this physical mechanism, this paper further proposes material and device process optimization ideas to provide theoretical references for engineering implementation.