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GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH3/N2 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular‐resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Keller et al. (2007) studied this question.
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