Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop VCEhave been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher VCEfor the BJTs without base contact implantation. Omitting the base contact implantation eliminates high concentrations of implantation-induced defects that act as recombination centers. This is advantageous because it allows a shorter distance Wp+between the emitter edge and the base contact, without affecting the current gain when no base contact implantation is used. The BJTs without contact implantation show a constant current gain as Wp+was reduced from 3 to 1 mum, whereas the gain decreased by 45% for the BJTs with base contact implantation for the same reduction of Wp+. A key to the successful fabrication of low-forward-voltage-drop SiC BJTs without base contact implantation is the formation of low-resistivity Ni/Ti/Al ohmic contacts to the base. The contact resistivity on the base region (NAap 4 times1017cm-3) was measured with linear transmission line method structures to rhoC= 1.9 times 10-3Omegacm2, whereas the contact resistivity with the base contact implantation was rhoC= 1.3 times 10-4Omegacm2, both after rapid thermal processing annealing at 800degC.