Exciton bandgaps, phonon energies, and free exciton binding energies of 3C, 4H, 6H, and 15R SiC are obtained from measurements of the free (and bound) exciton luminescence within the temperature range 4.2 to about 100 K. The values might be used to characterize polytypes of SiC.
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Ikeda et al. (1980) studied this question.
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