SiC blue LEDs were fabricated by the dipping technique, using 6H-SiC substrates whose (0001̄)C face varied toward the [112̄0] or [101̄0] direction. The surface morphology of the epitaxial layers on the off-oriented substrates was a striped pattern perpendicular to the off-axis direction. By using off-oriented substrates, the degradation of SiC blue LEDs can be greatly reduced. High-efficiency blue LEDs (12 mcd at 20 mA) were fabricated by increasing the amount of Al dopant in the n-type layer.
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Matsushita et al. (1990) studied this question.
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