Five pairs of ZnO/Zn 0.9 Mg 0.1 O multiple quantum wells (MQWs) with fixed barrier thickness of 55 nm and three well widths of 4, 8 and 16 nm have been grown on m -plane sapphires by pulsed laser deposition. Due to 2D quantum confinement with decreasing well width, the emission of excitons bound to the basal-plane stacking faults, which are one-dimensionally confined in MQWs, encounters larger blue shift than that of the near-band edge excitons. Furthermore, remarkably reducing coupling of free excitons with A 1 longitudinal optical phonons is closely correlated with increasing exciton binding energy but enhanced coupling of E 2 -low phonons is a result of increasing interaction with the interface phonons with decreasing well width.
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Chen et al. (2016) studied this question.
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