Effect of Al doping on low-temperature epitaxy of 3C-SiC/Si by chemical vapor deposition using hexamethyldisilane as a source material

Low-temperature growth of 3C-SiC by atmospheric-pressure chemical vapor deposition was carried out using hexamethyldisilane (Si2(CH3)6) as a source material. Single-crystal undoped SiC was grown on Si(111) without employing a carbonized buffer layer and on Si(100) with a buffer layer. In the case of adding Al(CH3)3 to the source gas, the Al-doped initial layer works as a buffer layer which controls the initial nucleation. The Al doping lowers the expitaxial temperature of this gas system down to 1000 °C.