Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching, Liu, Yongxun, Sugimata, Etsuro, Ishii, Kenichi, Masahara, Meishoku, Endo, Kazuhiko, Matsukawa, Takashi, Yamauchi, Hiromi, O'uchi, Shinichi, Suzuki, Eiichi