Properties of the Rn and IR‐1 Luminescence Bands in Cadmium Sulfide Irradiated with Thermal Neutrons

Specific features of Rn (λmax equals; 728 nm) and IR‐1 (1040 nm) luminescence bands in CdS single crystals irradiated by thermal neutrons with doses 1013 to 1019 n/cm2 were studied. The joint investigations of luminescence and photoconductivity dependences on temperature and on both the intensity and the wavelength of excitation confirm the Rn and IR‐1 centre models proposed earlier, (VCd · VS) and (VCd · InCd), respectively. The electron‐phonon interaction at radiative carrier capture on Rn‐centres are investigated, its parameters are obtained. At the first time it is found that at sufficiently low temperatures (≧ 160 K) the photosensitivity centres in monopolar, photosensitive semiconductor with wide band gap are the centres of effective nonradiative recombination due to high electron‐phonon interaction.