Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy

n-type Si(100) films have been grown by molecular-beam epitaxy utilizing low-energy Sb ion-beam doping. The kinetics of dopant incorporation were investigated as a function of acceleration potential =50--400 V), deposition temperature (Tₛ=550--1050 ^∘{}C), and Si growth rate (RSi=0.05--0.8 nm s^-1). The using accelerated-ion doping was up to 5 orders of magnitude higher than was was {≥}300 V at Tₛ{≤}850 ^∘{}C. At lower acceleration potentials, was temperature and deposition-rate dependent. =50 V and was still more than 1 order of magnitude higher than for thermal doping. Moreover, surface-segregation-induced profile broadening ΔSb, which for thermal-beam doping was {≥}80 nm per concentration decade for Tₛ{≤}650 ^∘{}C, was less than the depth resolution of the measurement, i.e., Δ_Sb≤12 nm per concentration decade. The experimental incorporation results, ,Tₛ,RSi), were found to be well described using a multisite model (including surface, bulk, and three intermediate sites) in which dopant surface segregation, incorporation, and bulk diffusion are accounted for by solving simultaneous transition-rate equations.