Hyperabrupt impurity profiles were formed by the Si molecular beam epitaxy (MBE) technique. Thin Sb-doped n-type epitaxial layers grown on n+substrates were used to successfully fabricate hyperabrupt varactor diodes. The characteristics of microwave diodes containing hyperabrupt profiles produced by a conventional ion-implantation and drive-in technique were compared with those having profiles "grown-in" by the MBE technique. The diodes made from Si-MBE films exhibited superior RF performance.
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Goodwin et al. (1979) studied this question.
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