In this letter, an InGaAs-on-Si single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of this device to the high absorption coefficient of InGaAs and low noise avalanche multiplication of Si.
No takes yet. Share an insight, caveat, or question.
Kang et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: