Experimental study demonstrates a low-loss silicon Michelson interferometric modulator achieving 20 Gbaud PAM-4 and 30 Gb/s BPSK, indicating strong potential for high-speed photonic links.
We demonstrate a high-speed silicon carrier-depletion Michelson interferometric (MI) modulator with a low on-chip insertion loss of 3 dB. The modulator features a compact size of 30 dB. The Vπ·Lπ of the MI modulator is 0.95–1.26 V·cm under a reverse bias of −1 to −8 V, indicating a high modulation efficiency. Experimental results show that a 4-level pulse amplitude modulation up to 20 Gbaud is achieved with a bit error rate of 6×10−3, and a 30 Gb/s binary phase-shift-keying modulation is realized with an error vector magnitude of 25.8%.
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Wang et al. (2017) studied this question.
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