Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 29, 2005Applied Physics Letters

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

View Full Paper
Ask AI
Bookmark
Share

Authors

MRMathieu RouvièreUniversité Paris-SudLVLaurent VivienCentre National de la Recherche ScientifiqueXRXavier Le RouxUniversité Claude Bernard Lyon 1

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Rouvière et al. (2005) studied this question.

synapsesocial.com/papers/6a901e603dd9003d79c90d06https://doi.org/10.1063/1.2139837
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High performance germanium-on-silicon detectors for optical communications2002 · 168 citations
  2. 2Metal–Germanium–Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers2004 · 75 citations
  3. 3Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm2003 · 27 citations
  4. 4Experimental demonstration of a low-loss optical H-tree distributionusing silicon-on-insulator microwaveguides2004 · 35 citations
  5. 5Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers2004 · 44 citations