Multiwalled carbon nanotubes on aluminum or indium tin oxide layers were irradiated with gallium focused ion beams (FIBs) to induce defects and increase emission sites of carbon nanotubes (CNTs). A turn-on voltage was found to decrease from 460 to 220 V by ion irradiation at a dose of 1×1015/cm2, corresponding to turn-on fields from 3.7 to 1.8 V/μm. However, noticeable improvements in emission characteristics were not observed as a result of high-dose FIB irradiation at and above 1×1016/cm2. Because of the local temperature rise due to the intense FIB this irradiation resulted in melting of CNTs. The third harmonic of a neodymium-doped yttrium fluoride (Nd:YLF) laser light was irradiated over screen-printed CNT cathodes, which resulted in turn-on voltage decreasing from 400 to 320 V, corresponding to turn-on fields from 3.2 to 2.6 V/μm, with increased emissions by a factor of 6.
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Sawada et al. (2003) studied this question.
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