High-Efficiency Micromachined Sub-THz Channels for Low-Cost Interconnect for Planar Integrated Circuits

This paper presents for the first time the design, fabrication, and demonstration of a micromachined silicon dielectric waveguide based sub-THz interconnect channel for a high-efficiency, low-cost sub-THz interconnect, aiming to solve the long-standing intrachip/interchip interconnect problem. Careful studies of the loss mechanisms in the proposed sub-THz interconnect channel are carried out to optimize the design. Both theoretical and experimental results are provided with good agreement. To guide the channel design, a new figure of merit is also defined. The insertion loss of this first prototype with a 6-mm-long interconnect channel is about 8.4 dB at 209.7 GHz, with a 3-dB bandwidth of 12.6 GHz.