Study of Room-Temperature Photomagnetoelectric and Photoconductive Effects in Au-Doped Silicon

Recombination properties of the photoinjected carriers in gold-doped n-type and p-type silicon have been investigated at $T=300$ ^∘{}K using measurements of the steady-state photomagnetoelectric (PME) and photoconductive (PC) effects. A theory for the PME and PC effects in Au-doped silicon has been developed for the case of low injection and arbitrary trapping. The theory was checked by calculating the electron- and hole-capture probabilities at the gold acceptor and donor levels from the PME and PC measurements, using the ratios of the electron-hole capture rate given by Fairfield et al. and the results are found to be in good agreement with those determined from other methods.