On the Reverse‐Biased Capacitance of Step p+‐n Junctions with Traps

The steady‐state occupation of multiple chargeable deep trap levels of a depletion‐layer is calculated. Using this result, the capacitance of reverse‐biased p+‐n step junctions with traps is obtained by integration of the Poisson equation. It is shown that measurements of the ac and dc capacitance of the p‐n junction with traps and of the capacitance of an equivalent junction without traps give some information about the capture cross‐section ratios for electrons and holes of the trap levels.