Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride

Visible-blind metal–semiconductor–metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride were fabricated. I–V measurement showed good Schottky contact and very low dark current, which was only 723 nA at 10 V and 544.8 pA at 3 V. The photocurrent spectrum showed a cut-off wavelength at 366 nm and an ultraviolet/visible ratio of three orders of magnitude. The responsivity is 0.05 A/W at 5 V bias.