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We investigate the low-field magnetoresistance ρₓₓ perpendicular to a one-dimensional periodic potential which is imposed upon a two-dimensional electron gas in GaAs-Alₓ{Ga}_{1{{-}}x}$As heterojunctions. Distinct low-field anomalies and a crossover from positive to large negative magnetoresistance with increasing potential strength unveil the important role of anisotropic relaxation processes in strongly modulated electron systems.
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Müller et al. (1994) studied this question.
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