Investigation of rapid-thermal-oxidized porous silicon

We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750 °C≤T≤1100 °C). The intensity of the photoluminescence recovered to near the as-anodized value and the peak wavelength was red shifted by approximately 100 nm. The oxidized porous Si has been found to have lower resistance and higher photoelectric efficiency than as-anodized material.