Time-resolved emission spectra and photoluminescence decay kinetics are analyzed in porous Si samples exhibiting a noticeable inhomogeneous broadening under steady-state selective excitation. The gated emission spectra are found to be substantially narrower compared to a steady-state one, with a pronounced redshift with time. Considerable dependence of the decay parameters upon the emission wavelength is found. The decay time distribution analysis applied leads to a model where the nonradiative decay mechanism is attributed to traps of the same type, the number of traps per Si grain obeying the Poissonian statistics.
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Гапоненко et al. (1994) studied this question.
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