Spatially variable reaction in the formation of anodically grown porous silicon structures

In porous silicon formations there is an increase of dissolution rate at the fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from oxidation of molecular hydrogen at the passivated (hydrogen-covered) sites. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is experimentally measured and a theoretical investigation is carried out by a semiempirical Hartree–Fock calculation. This spatially variable dissolution generates the porous silicon surface.