Self-organized Ge quantum wires were grown on regular atomic steps formed along [1̄10] direction on Si(111) substrates by annealing at 870 °C in vacuum. The samples were then studied by atomic force microscopy, polarization-dependent Raman scattering, and low temperature photoluminescence spectroscopy. The results suggest that good quality Ge quantum wires were formed and clear quantum confinement-induced quantization in the wires was observed.
No takes yet. Share an insight, caveat, or question.
Jin et al. (1999) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from Applied Physics Letters