The effect of fast neutron (energy >0.1MeV) irradiation on electrical properties and deep level spectra of undoped n-AlGaN films with Al mole fraction x=0.4 are presented. In virgin samples, the properties are strongly influenced by deep traps at Ec−0.25eV present in high concentrations (∼2.5×1018cm−3). Neutron irradiation with doses higher than 1015cm−2 leads to compensation of these centers with a removal rate of about 500cm−1. After neutron irradiation with high dose of 1.7×1017cm−2 the samples become resistive (>104Ωcm), with the Fermi level pinned by new centers near Ec−0.35eV introduced by irradiation with a rate of about 10cm−1. The neutron irradiation also gives rise to an increase of the concentration of deep hole traps with activation energy of 1eV.
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Polyakov et al. (2006) studied this question.
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