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Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel, Okamoto, Mitsuo, Iijima, Miwako, Nagano, Takahiro, Fukuda, Kenji, Okumura, Hajime
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Okamoto et al. (2012) studied this question.
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