Effect of Indium Ambient on Electrical Properties of Mg-Doped Al x Ga 1− x N

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Mg-doped Al x Ga 1-x N epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD) using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Al 0.43 Ga 0.57 N epilayer grown under indium (In) ambient is of the order of 10 4 Ω-cm, while the resistivity of Mg-doped Al 0.43 Ga 0.57 N grown without In assistance is of the order of 10 6 Ω-cm. The ultraviolet light-emitting diodes (UV-LEDs) using the In-assisted Mg-doped Al 0.43 Ga 0.57 N as the p-type layers were fabricated to verify the function of indium ambient. It is found that there are a lower turn-on voltage and a lower diode series resistance in the UV-LEDs fabricated with p-type Al 0.43 Ga 0.57 N layers grown under In-ambient.