We used optically detected cyclotron resonance (ODCR) at X-band frequency ({~}9.23 GHz) to study the hole effective masses in 6H-SiC. In high-purity 6H-SiC layers, two well-resolved cyclotron resonance (CR) peaks have been observed and attributed to the CR of electrons and holes. Similar to 4H-SiC, the hole effective mass in 6H polytype is also found to be isotropic in the basal plane with the transverse mass m_h⊥=(0.66±0.02) m₀. The hole effective mass component along the c-axis is determined as m_h∥=(1.85±0.03) m₀. From the obtained data we can estimate the electron effective mass component along the c-axis to be in the range 3--6 m₀ depending on the anisotropy of the electron effective mass in the basal plane.
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Són et al. (2002) studied this question.
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