Gallium nitride phosphide (GaN1-x P x ) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga-NH3-PCl3-N2 system. The growth rate was 0.80 µm/hr at 1100°C and decreased with decreasing growth temperature. Composition x increased with decreasing growth temperature. The maximum composition x obtained was about 0.04 at 1050°C.
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Igarashi et al. (1985) studied this question.
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