Thermal oxidation of n- and p-type 6H-silicon carbide

Thermal oxides have been grown on monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face. The oxidation was performed in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. Polysilicon gates doped with POCl 3 were used for electrical characterisation by capacitance-voltage measurements at room temperature. Large flatband voltage shifts indicate fixed oxide charges up to 10 13 cm −2 .