Reactive Ion-Beam Etching of Silicon Carbide

A reactive ion-beam etching technique using freon gas is developed for microfabrication in SiC. The enhancement of the etching rate of SiC is apparent by admixing O2 gas in CF4 gas. The etching rate of SiC for CF4+O2 (40%) gas is about 2 times larger than that for Ar gas. This technique appears to be very useful for producing various devices of SiC.