Air‐Stable Solution‐Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.