Through electric-field-induced second-harmonic generation (EFISHG) measurement, we studied carrier injection and accumulation in a pentacene layer under the effect of dipole reversal in a ferroelectric poly(vinylidene fluoride–trifluoroethylene) [P(VDF–TrFE)] layer. The change in the electric field in the pentacene layer due to polarization reversal in the P(VDF–TrFE) layer was determined by direct probing. Using the value of remnant polarization of P(VDF–TrFE) obtained from displacement current measurement (DCM), we showed that the EFISHG response closely reflected the hole injection and accumulation at the pentacene/P(VDF–TrFE) interface induced by spontaneous polarization in P(VDF–TrFE).
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Li et al. (2010) studied this question.
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