Diffusion barrier properties of amorphous and nanocrystalline Ta films for Cu interconnects

In the present paper, the diffusion barrier properties of amorphous and nanocrystalline (NC) Ta films, and the interface microstructure of Ta/Cu were investigated as a function of annealing temperature. X-ray diffraction, scanning electron microscopy, cross-sectional transmission electron microscopy, and energy-dispersive spectrometer line scans were employed to study the microstructure evolution and diffusion behavior. It was found that an amorphous layer with a thickness of ∼5 nm formed at the interface of NC Ta/Cu at 450 °C annealing, while the interface of amorphous-Ta/Cu was still abrupt. Moreover, amorphous-Ta film acts as an effective diffusion barrier up to temperatures of 650 °C, which is higher than that for NC-Ta film. The fast diffusion along grain boundaries inside NC-Ta films is suggested to be responsible for the main failure of NC-Ta film.