Numerical and analytical methods for the calculation of redistribution of boron during thermal oxidation are reviewed. An approximate analytic two‐dimensional diffusion model is developed which is based on a modification of the approach used by Huang and Welliver. Accuracy of the analytic model in one dimension is examined over a wide range of processing conditions using exact numerical simulation as a benchmark. The new analytic model is effectively used to simulate the channel and channel stop profiles of an n‐MOS technology and measured results are shown.
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Lee et al. (1979) studied this question.