High-fmax (> 160 GHz) AlGaAs/GaAs heterojunction bipolar transistors are developed using power-oriented layer structures and a selfalignment fabrication technology characterised by a base–metal overlaid structure. The fabricated power transistors tested at 2.6 GHz yield maximum power-added efficiencies of 69 and 60% at low supply voltages of 3 and 1.5 V, respectively.
No takes yet. Share an insight, caveat, or question.
Matsuoka et al. (1993) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: