A new mechanism for the explanation of negative differential resistance (NDR) in the output characteristics of heterojunction bipolar transistors is proposed. The traditional recourse to thermal effects is not required and modeled characteristics successfully reproduce the correct experimentally observed shape. The effective conduction band spike height variation with bias at the emitter-base junction, together with the base narrowing effects, can account for NDR.
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Lee et al. (1993) studied this question.
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