The paper provides an extension to the one‐dimensional TLM diffusion model. The extended diffusion node presented here models the exact transport equation with diffusion drift and recombination of charge carriers in semiconductors. A general algorithm for providing a numerical solution to the transport phenomena is also presented here. The analytical solution for infinitely long semiconductors is compared with the TLM numerical results.
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Al‐Zeben et al. (1992) studied this question.
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