According to Shockley–Read–Hall statistics for deep traps, it has been estimated that the electrostatic potential propagates in semi-insulating substrates. In n-i-n structures made on hole-trap-rich substrates, a negative electric potential applied on an n region is carried to the vicinity of the other electrode. On the other hand, substrates with electron traps act like usual insulators. This phenomenon may be the primary origin of GaAs metal-semiconductor field-effect transistor side-gating effects.
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Ohno et al. (1989) studied this question.
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