The behavior of stacking fault tetrahedra (SFT) induced by electron irradiation in copper crystals has been investigated with a high-voltage electron microscope, concentrating especially on a) the growth of individual SFT, and b) the formation of linear arrays of SFT in the <100> direction. The effects of accelerating voltage, specimen temperature and dose rate of electrons on the behavior of SFT have also been examined.
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Fujita et al. (1982) studied this question.
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