Electrical Resistivity of Secondary Defects in Quenched Aluminum

Electrical resistivities of secondary defects in quenched aluminum have been determined experimentally. The resistivity of a void is found to be proportional to the square of the void size and is obtained to be 2.5×10 -12 \(s²\)cm 4 , where s is the length of a side of the regular octahedral void. The stacking fault resistivity is \((4.0{±}1.5)× 10⁻¹³\) cm 2 . The upper limit value of the dislocation resistivity is \(1.5{×}10⁻¹⁹\) cm 3 .