The Si-face of 6H-SiC is slowly oxidized even at temperatures as high as 1200° C in steam. We found that the oxidation rate of the implanted Si-face is several times faster than that of the non-implanted face. This oxidation rate strongly depends on the mass number of the implanted ion, and on the acceleration energy. Based on the study of the oxidation rate, dosage and acceleration energy dependence, this phenomenon is concluded to be induced by the amorphous layer of the implanted region. We demonstrated the selective oxidation technique utilizing this phenomenon in its application to various devices.
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UENO et al. (1994) studied this question.
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