Patterning of Solution‐Processed Semiconducting Polymers in High‐Mobility Thin‐Film Transistors by Physical Delamination

Patterning of high-mobility semiconducting polymer thin films is essential to prevent undesirable crosstalk in realization of integrated circuits. We present here two simple selective physical delamination methods that allow clean and high-resolution patterning of semiconducting polymers for thin-film transistors, leading to a significant reduction in OFF current while retaining the high field-effect mobilities of the unpatterned polymer films.