Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
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Yoshikawa et al. (1991) studied this question.
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