Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD

We have optimized the preparation conditions of p-i-n type a-Si:H solar cells prepared by photo-CVD. The pyramid-shaped SnO2 with haze ratio of 25% was chosen as the best TCO (transparent conductive oxide). The best efficiency obtained for a glass/TCO/p/buffer/i/n/Al structure of this type was 11.4% (V oc=0.90 V, I sc=17.86 mA/cm2, FF=0.706) for a 3×3 mm2 cell; the thicknesses of the p-, buffer-, i-, and n-layers were 50 A, 150 A, 7800 A, and 600 A, respectively.